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MT4GS16H2568-66-SPXX Capacity 4GB (1x 4GB) Brand Micron Speed DDR3L-1066 -1066MT/s - 1067MT/s - PC3L-8500 Voltage 1
M395T5160QZ4-CE66 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1
8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM CAS Latency CL4 Configuration 8-chip 64M x8 Pieces in Kit 2 Compatibility
M378A2K43CB1-CRC Capacity 16GB (1x 16GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
Hynix 2GB (1x 2GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin SODIMM RAM Module Signal Processing_Unbuffered MT4GS16H2568-66-SPXX Capacity 4GB (1x 4GB)Product Overview This 2GB (1x 2GB) DDR3 1333 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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