Samsung 512MB (2x 256MB) CL2.5 DDR-266 PC2100 2.5V SR x8 184-pin UDIMM RAM Kit System Type_Workstation This 16GB (2x 8GB) DDR3L

This 16GB (2x 8GB) DDR3L 1866 MT/s Dual rank

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (1x 32GB) DDR3 1866 MT/s 240-pin LRDIMM RAM module from Hynix

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Samsung 512MB (2x 256MB) CL2.5 DDR-266 PC2100 2.5V SR x8 184-pin UDIMM RAM Kit System Type_Workstation This 16GB (2x 8GB) DDR3LProduct Overview This 512MB (2x 256MB) DDR 266 MT s Single rank, x8 configuration RAM kit from Samsung is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM kit also operates at a standard voltage of 2. 5V with a CAS Latency of CL2. 5, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical